Title:
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND MANUFACTURING DEVICE
Document Type and Number:
Japanese Patent JP3959447
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide the method of manufacturing a semiconductor device with a high melting point metal silicide layer, in which the high melting point metal silicide layer can be formed easily and the high melting point metal silicide layer is securely heat treated to improve the characteristic of it and to provide the manufacturing device of it.
SOLUTION: In the heat treatment for converting the TiSi2 films 17a, 17a' and 17a" of C49 phase to be of low resistance, using the semiconductor wafer holder in a heat treating furnace of which surface is spherically recessed, the TiSi2 films 17a, 17a' and 17a" of the C49 phase are adhered to the recessed shape of the wafer holder and are heat treated with compression stress applied to them and the low resistance TiSi2 films 17, 17a' and 17a" of the C54 phase are formed without heat aggregating reaction.
Inventors:
Takashi Nagano
Application Number:
JP23486896A
Publication Date:
August 15, 2007
Filing Date:
September 05, 1996
Export Citation:
Assignee:
ソニー株式会社
International Classes:
H01L21/28; H01L21/3205; H01L21/336; H01L23/52; H01L29/78; (IPC1-7): H01L21/28; H01L21/3205; H01L29/78; H01L21/336
Domestic Patent References:
| JP7201777A | ||||
| JP63150938A | ||||
| JP62137850A | ||||
| JP4294817A | ||||
| JP9139359A | ||||
| JP8139056A | ||||
| JP8031824A |
Attorney, Agent or Firm:
Funabashi Kuninori
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