METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Title:

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JPH08167601

Kind Code:

A

Abstract:

PURPOSE: To form an insulation film low in the dielectric constant and the moisture absorption characteristic and excellent in the step coverage by a low output device by a method wherein the insulation film is formed of an organic Si compound having Si-F bond as material.

CONSTITUTION: An insulation film 23 is formed of an organic Si compound having Si-F coupling as material. As such organic Si compound, there are fluoroalkoxysilane, chain-like polysilane, annular polysilane and fluorosilane of a high order. The insulation film 23 is formed by a plasma CVD method with the use of such organic compound as material gas. For example, an interlayer insulation film 21 of an SiO2 film, etc., is formed on a semiconductor substrate 12 of an Si substrate, etc., and an Al wire 22 is pattered on this interlayer insulation film 21. Thereafter, an SiOF film 23 is formed under a specific condition by using a CVD device with the use of an organic Si compound having Si-F bond of, for example, difluorodiethoxysilane as material gas.

Inventors:

MUROYAMA MASAKAZU

Application Number:

JP33260394A

Publication Date:

June 25, 1996

Filing Date:

December 13, 1994

Export Citation:

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Assignee:

SONY CORP

International Classes:

H01L21/316; H01L21/31; H01L21/314; H01L21/471; H01L21/4763; (IPC1-7): H01L21/314; H01L21/31

Attorney, Agent or Firm:

Tsuchiya Masaru

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