Title:
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5222483
Kind Code:
A
Abstract:
PURPOSE:To obtain minute patterns by reducing the electrostatic capacity with the use of a thick, two-layer insulating film formed by fthe lamination of thick films by the CVD method.
Inventors:
KADOMA YOSHINOBU
NAMIKI YOSHINORI
FUKUDA TAKESHI
ABE SHIGEHARU
NAMIKI YOSHINORI
FUKUDA TAKESHI
ABE SHIGEHARU
Application Number:
JP9875075A
Publication Date:
February 19, 1977
Filing Date:
August 13, 1975
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L21/768; H01L21/331; H01L23/522; H01L29/08; H01L29/73; (IPC1-7): H01L21/72; H01L29/08
Domestic Patent References:
| JPS4933431A | 1974-03-27 | |||
| JPS4996684A | 1974-09-12 |