Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND THE SEMICONDUCTOR LIGHT-EMITTING ELEMENT
Document Type and Number:
Japanese Patent JP2011009563
Kind Code:
A
Abstract:
To reduce the wavelength distribution σ of the emission wavelength, in a semiconductor light-emitting element having a substrate made of a different material from that of the semiconductor layer.
A method for manufacturing the semiconductor light-emitting element having the semiconductor layer is such that it includes a step of forming the film of the semiconductor layer on a substrate 11, in which the surface roughness Ra of the rear surface facing the surface, on which the semiconductor layer is formed, is 0.0001-3.0 μm and the warpage quantity H is in the range of -30 μm≤H<0, and a step of grinding the rear surface of the substrate 11, on which the semiconductor layer is formed.
Inventors:
KUSUKI KATSUTERU
Application Number:
JP2009152716A
Publication Date:
January 13, 2011
Filing Date:
June 26, 2009
Export Citation:
Assignee:
SHOWA DENKO KK
International Classes:
H01L33/32; H01L33/20; H01L21/304
Domestic Patent References:
| JP2007153712A | 2007-06-21 | |||
| JP2008117799A | 2008-05-22 | |||
| JP2003063897A | 2003-03-05 | |||
| JP2007137736A | 2007-06-07 | |||
| JP2008034444A | 2008-02-14 |
Attorney, Agent or Firm:
Jiro Kobe
Takeshi Senda
Yukio Iyoda
Takeshi Senda
Yukio Iyoda