To provide a method of manufacturing a semiconductor light-emitting device that achieves the easiness of connection between the device and a supporting substrate.
A method of manufacturing a semiconductor light-emitting device comprises the steps of: forming a first semiconductor layer of a first conductivity type on a substrate; forming a second semiconductor layer of a second conductivity type having the opposite properties to the first conductivity type above the first semiconductor layer; forming a first isolation groove whose depth reaches the substrate and which defines a plurality of light-emitting element regions in a surface of the substrate by etching the second semiconductor layer and the first semiconductor layer; forming second isolation grooves whose depth reaches the first semiconductor layer and which define a plurality of light-emitting portions and an electrode arrangement portion in each light-emitting element region by etching the second semiconductor layer; forming first electrodes in each light-emitting portion on the second semiconductor layer; and forming a second electrode, with a shape extending in the electrode arrangement portion on the second semiconductor layer, from the first semiconductor layer exposed on the bottoms of the second isolation grooves.
| JP2005322847A | 2005-11-17 | |||
| JP2008282942A | 2008-11-20 | |||
| JP2006086516A | 2006-03-30 | |||
| JP2008277409A | 2008-11-13 | |||
| JP2009135474A | 2009-06-18 | |||
| JP2009188240A | 2009-08-20 | |||
| JP2007088277A | 2007-04-05 | |||
| JP2006313884A | 2006-11-16 | |||
| JP2007527123A | 2007-09-20 | |||
| JP2005019530A | 2005-01-20 |
Mikio Kuruyama
Ukai Shinichi
Adachi Nobuhiro