Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING DEVICE
Document Type and Number:
Japanese Patent JP3412601
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor light-emitting device where a mask is freely aligned on a wafer and a light-emitting element is appropriately coated with a package containing phosphor.
SOLUTION: The pattern of a sub-mount element 1 is formed on a silicon wafer 5, and a light-emitting element 2 is mounted on the sub-mount element 1 in continuity, with the light-emitting element 2 sealed with a resin package 3 comprising phosphor for wavelength conversion. Here, as the silicon wafer 5, a land 5a is formed for a spacer for enlarging the interval between individual patterns in the array direction of at least one direction of the individual pattern of the sub-mount element 1, and a position corresponding to the land 5a is masked so that a phosphor paste 7 is applied by a screen printing.
Inventors:
Kunihiko Obara
Kenichi Sanada
Kenichi Sanada
Application Number:
JP2000127479A
Publication Date:
June 03, 2003
Filing Date:
April 27, 2000
Export Citation:
Assignee:
Matsushita Electric Industrial Co., Ltd
International Classes:
H01L33/32; H01L33/50; H01L33/54; H01L33/56; (IPC1-7): H01L33/00
Domestic Patent References:
| JP2000208822A | ||||
| JP1140848A | ||||
| JP2000223750A | ||||
| JP2000261041A |
Other References:
【文献】国際公開98/34285(WO,A1)
Attorney, Agent or Firm:
Fumio Iwahashi (2 others)
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