To provide a method for continuously manufacturing a semiconductor nano fine crystal having a core-shell structure.

The method for manufacturing a semiconductor nano fine crystal having a core-shell structure comprises the following processes 1 to 3 carried out in a micro passage. The processes are: a process 1 of forming the core part of the semiconductor nano fine crystal by passing a stock solution of the core component selected from CdS, CdSe and CdTe at a specified velocity in the temperature range of 250 to 350°C through the micro passage; a process 2 of passing a stock solution of the shell component selected from ZnS, ZnSe, ZnTe and ZnO through the micro passage after the core part of the semiconductor nano fine crystal is formed in the process 1 so as to allow the core part to join the shell component; and a process 3 of epitaxially growing the shell component on the core part to prepare the semiconductor nano fine crystal by passing the joined flow in the process 2 at a specified velocity in the temperature range of 100 to 250°C through the micro passage.