Title:
半導体光素子を作製する方法
Document Type and Number:
Japanese Patent JP7059518
Kind Code:
B2
Abstract:
A surface-emitting semiconductor laser has a semiconductor structure that includes a first side, a second side opposite to the first side, and a side surface that extends from the second side to the first side; a first electrode provided on the first side of the semiconductor structure; and a second electrode provided on the first side of the semiconductor structure. The semiconductor structure also includes a substrate, a first stacked semiconductor layer disposed on the substrate, an active layer disposed on the first stacked semiconductor layer, and a second stacked semiconductor layer disposed on the active layer. The first stacked semiconductor layer includes a first distributed Bragg reflector, and the second stacked semiconductor layer includes a second distributed Bragg reflector. The semiconductor structure side surface has at least an upper surface that is free of chipping.
Inventors:
Yukihiro Tsuji
Application Number:
JP2017073938A
Publication Date:
April 26, 2022
Filing Date:
April 03, 2017
Export Citation:
Assignee:
Sumitomo Electric Industries, Ltd.
International Classes:
H01L21/301; H01S5/183; H01L21/3065
Domestic Patent References:
JP2003158097A | ||||
JP2005050997A | ||||
JP2012502496A | ||||
JP5107757A | ||||
JP2014204014A | ||||
JP2004207388A | ||||
JP2003197881A | ||||
JP2006196693A | ||||
JP2004022656A |
Foreign References:
WO2008093880A1 | ||||
WO2015152817A1 |
Attorney, Agent or Firm:
Yoshiki Hasegawa
Yoshiki Kuroki
▲高▼木 邦夫
Shotaro Terazawa
Kondo Ichira
Yoshiki Kuroki
▲高▼木 邦夫
Shotaro Terazawa
Kondo Ichira
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