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Title:
METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR SUBSTRATE, SOLAR BATTERY, AND CASTING MOLD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE
Document Type and Number:
Japanese Patent JP2003112252
Kind Code:
A
Abstract:

To provide a method of manufacturing a substrate which can omit a process step of slicing from an ingot, and also provide a solar battery which is high in mass productivity, inexpensive, and good in quality.

This method of manufacturing the substrate consists of a process step of forming a casting mold having a groove in a perpendicular direction by mating a plurality of planar members in parallel, a process step of injecting raw material silicon into the groove of this casing mold, a process step of filling the groove by maintaining the casting mold at a temperature higher than the melting point of the silicon and melting and raw material silicon, a process step of forming the planar silicon by solidifying the molten raw material silicon, and a process step of separating the planar silicon from the casting mold by returning the casting mold to a plurality of the planar members.


Inventors:
NISHIDA AKIYUKI
IWANE MASAAKI
IWASAKI YUKIKO
NAKAGAWA KATSUMI
ISHIHARA SHUNICHI
SATO HIROSHI
Application Number:
JP2001308107A
Publication Date:
April 15, 2003
Filing Date:
October 03, 2001
Export Citation:
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Assignee:
CANON KK
International Classes:
B22D25/04; B22C1/00; B22C3/00; B22C9/06; B22D23/06; B22D25/02; B22D27/04; H01L31/04; (IPC1-7): B22D25/04; B22C1/00; B22C3/00; B22C9/06; B22D23/06; B22D25/02; B22D27/04; H01L31/04
Attorney, Agent or Firm:
Fukumori Hisao