METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE

Title:

METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE

Document Type and Number:

Japanese Patent JP2007173694

Kind Code:

A

Abstract:

To provide a method of manufacturing a semiconductor substrate which can control a thin BOX film thickness, ensure high film thickness uniformity, and make an SOI layer thin.

An insulating layer 12 is formed in advance in a major surface side of a first substrate 11 as a self stop layer, and thereafter a buffer layer 13 is formed on the insulating layer 12. An ion implanted layer 14 is formed by implanting the first substrate 11 with ion and the buffer layer is removed by using the insulating layer as a self stop layer. Then, the insulating layer of the first substrate and a second substrate 15 are laminated, and the first substrate is divided by the ion implanted layer. Consequently, a thin BOX film thickness can be controlled and an SOI layer can be made thin.

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Inventors:

KAKIZAKI SATOO
SATO NOBUHIKO

Application Number:

JP2005372095A

Publication Date:

July 05, 2007

Filing Date:

December 26, 2005

Export Citation:

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Assignee:

CANON KK

International Classes:

H01L21/02; H01L21/265; H01L21/762; H01L27/12

Attorney, Agent or Firm:

Jyohei Yamashita
Hiroshi Shimura
Michio Nagai

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