Title:
METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE, AND SEMICONDUCTOR SUBSTRATE
Document Type and Number:
Japanese Patent JP2010118616
Kind Code:
A
Abstract:
To provide a method of manufacturing a semiconductor substrate that forms an epitaxial layer of a high quality having a low defect density on a silicon layer or a silicon substrate by using a small number of steps at a low cost.
An anisotropic etching is performed on a surface 11a of a silicon wafer 11 by a wet etching method. By this anisotropic etching on the surface 11a of the silicon wafer 11, fine irregularities 12 is formed on the surface 11a of the silicon wafer 11. The fine irregularities 12 may be a number of grooves 14 consisting of slopes 12a, 12b of a (111) plane for example, formed periodically.
Inventors:
WATANABE YUKIMUNE
Application Number:
JP2008292419A
Publication Date:
May 27, 2010
Filing Date:
November 14, 2008
Export Citation:
Assignee:
SEIKO EPSON CORP
International Classes:
H01L21/205; C23C16/34; C23C16/42; C30B25/18; C30B29/36; C30B29/38; H01L21/20; H01L21/306
Attorney, Agent or Firm:
Kazuya Nishi
Masatake Shiga
Kazunori Onami
Masatake Shiga
Kazunori Onami