Title:
半導体ウエハ、放射線検出素子、放射線検出器、及び化合物半導体単結晶基板の製造方法
Document Type and Number:
Japanese Patent JP7250919
Kind Code:
B2
Abstract:
Provided is a stable CdZnTe monocrystalline substrate having a small leakage current even when a high voltage is applied and having a lower variation in resistivity with respect to variations in applied voltage values. A semiconductor wafer comprising a cadmium zinc telluride monocrystal having a zinc concentration of 4.0 at% or more and 6.5 at% or less and a chlorine concentration of 0.1 ppm by mass or more and 5.0 ppm by mass or less, wherein the semiconductor wafer has a resistivity of 1.0 × 107 Qcm or more and 1.0 × 108 Ω cm or less when a voltage of 900 V is applied, and wherein a ratio (variation ratio) of the resistivity at application of 0 V to the resistivity at application of a voltage of 900 V is 20% or less.
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Inventors:
Koji Murakami
Akira Noda
Ritsuichi Hirano
Akira Noda
Ritsuichi Hirano
Application Number:
JP2021520037A
Publication Date:
April 03, 2023
Filing Date:
December 05, 2019
Export Citation:
Assignee:
JX Nippon Mining & Metals Co., Ltd.
International Classes:
H01L27/144; C30B11/00; C30B29/46; G01T1/24; H01L31/08
Domestic Patent References:
| JP2016018972A | ||||
| JP2015504513A | ||||
| JP2017197413A |
Attorney, Agent or Firm:
Axis International Patent Attorney Corporation
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