Title:
METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2023181546
Kind Code:
A
Abstract:
To provide a method of manufacturing a silicon carbide semiconductor device, the method achieving improvement of tight adhesion property between an ohmic electrode and a region formed on the ohmic electrode, thereby achieving the long-term reliability of the silicon carbide semiconductor device.SOLUTION: A method of manufacturing a semiconductor device includes: a first step of forming a semiconductor element 20 on a semiconductor substrate; a second step of polishing a rear face of the semiconductor element 20 to a roughness (Ra) equal to or more than 2 nm and less than 10 nm; a third step of depositing molybdenum and nickel, or titanium and nickel in this order on the polished rear face of the semiconductor element 20; and a fourth step of forming an ohmic electrode 21 composed of nickel silicide and titanium carbide, or nickel silicide and molybdenum carbide by laser annealing, after the deposition.SELECTED DRAWING: Figure 2
Inventors:
UCHIUMI MAKOTO
MIYASATO MAKI
MIYASATO MAKI
Application Number:
JP2023189655A
Publication Date:
December 21, 2023
Filing Date:
November 06, 2023
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD
International Classes:
H01L21/28
Attorney, Agent or Firm:
Akinori Sakai
Previous Patent: air conditioner
Next Patent: Cleaning equipment for filter press equipment and filter press equipment
Next Patent: Cleaning equipment for filter press equipment and filter press equipment