Title:
METHOD FOR MANUFACTURING SILICON FILM AND METHOD FOR MANUFACTURING SOLAR BATTERY
Document Type and Number:
Japanese Patent JP2005336008
Kind Code:
A
Abstract:
To provide a method for manufacturing a silicon film, by which a thick silicon film can be obtained while suppressing the degree of roughness, and to provide a method for manufacturing a polycrystalline silicon solar battery capable of realizing both of a large electric current and high FF at a low cost.
The solar battery is manufactured by dipping a polycrystalline silicon substrate into a solution 24 containing silicon and forming a pn-junction in a silicon film by growing the silicon film on a substrate 28 while decreasing the temperature lowering rate of the solution with time during dipping of the substrate in the solution.
Inventors:
MIZUTANI MASAKI
NISHIDA AKIYUKI
NAKAGAWA KATSUMI
NISHIDA AKIYUKI
NAKAGAWA KATSUMI
Application Number:
JP2004156968A
Publication Date:
December 08, 2005
Filing Date:
May 27, 2004
Export Citation:
Assignee:
CANON KK
International Classes:
C01B33/02; C30B19/02; C30B19/10; C30B29/06; H01L21/208; H01L31/04; H01L31/18; (IPC1-7): C30B29/06; C01B33/02; C30B19/10; H01L31/04
Attorney, Agent or Firm:
Keisuke Watanabe
Yoshihiro Yamaguchi
Yoshihiro Yamaguchi