Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
Method for manufacturing silicon
Document Type and Number:
Japanese Patent JP5942899
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a production method for producing silicon from machining scraps which is applicable to machining scraps containing no abrasive grains of silicon carbide and enables stable mass production.SOLUTION: A silicon production method includes a step of melting machining scraps produced in cutting or grinding a silicon ingot or a silicon wafer. In the melting step, the machining scraps are induction-heated in a condition where the maximum difference of elevation h of the liquid surface in the surface of molten silicon is 0.5 cm or larger. The melting step meets conditions: (1) 5-95 wt.%, relative to the total amount of molten silicon, of the machining scraps are molten in molten silicon formed by melting raw material silicon; and (2) the machining scraps are pricked with a jig in a state where the machining scraps are heated to a temperature equal to or higher than the melting point of silicon.

Inventors:
Hiroyuki Ueno
Yukihiro Miyamoto
Toshiaki Katayama
Yoji Arita
Keiji Yamahara
Application Number:
JP2013039578A
Publication Date:
June 29, 2016
Filing Date:
February 28, 2013
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
Mitsubishi Chemical Corporation
International Classes:
C01B33/02; B09B3/00; B09B5/00; C01B33/037; H01L31/04
Domestic Patent References:
JP2001526171A
JP2001048697A
JP2006027923A
JP10251007A