To manufacture a solid-state image sensor where a difference of signal output values between a center part and a peripheral part of a pixel region is reduced further even if the pixel region is large.

The solid-state image sensor includes the pixel region 10 where a plurality of pixels are two-dimensionally arranged and a peripheral circuit region which includes a circuit driving a plurality of pixels and is arranged at a periphery of the pixel region 10. In the method, a step of forming an insulating film 74 in the pixel region 10 and the peripheral circuit region on at least one insulating film 74 in respective wiring layers 71 to 74, a step of selectively forming a prescribed layer 91 in the pixel region 10 on the insulating film 74, and a step of polishing and flattening the insulating film 74 where a layer 91 is formed for the whole pixel region 10 and the peripheral circuit region so that the layer 91 is completely removed are performed.