METHOD FOR MANUFACTURING SPUTTER TARGET CONSISTING OF Si-BASED ALLOY, SPUTTER TARGET OF THIS KIND, AND ITS USE

Title:

METHOD FOR MANUFACTURING SPUTTER TARGET CONSISTING OF Si-BASED ALLOY, SPUTTER TARGET OF THIS KIND, AND ITS USE

Document Type and Number:

Japanese Patent JP2004162179

Kind Code:

A

Abstract:

To provide a sputter target having no disadvantages of a known sputter target which is manufactured at the cost as low as possible.

In a sputter target manufacturing method, a target material is manufactured in a casting technology by melting and casting in vacuum, and cast in a hollow cylindrical mold.

More Like This:

WO/1990/007998	DEVICE FOR SUPPORTING AND ADJUSTING THE POSITION OF AN UPPER SPACER IN A MOULD FOR PRESSURE CASTING FLAT METALLIC PRODUCTS SUCH AS SLABS
JPS5856047	[Title of the device] Pressurization Furnace for molten metal
WO/2004/024371	MOLTEN METAL PRESSURE POUR FURNACE AND METERING VALVE

Inventors:

WEIGERT MARTIN DR
HEINDEL JOSEF
KONIETZKA UWE

Application Number:

JP2003381454A

Publication Date:

June 10, 2004

Filing Date:

November 11, 2003

Export Citation:

Click for automatic bibliography generation Help

Assignee:

HERAEUS GMBH W C

International Classes:

B22D18/04; B22D15/02; B22D27/15; C22C28/00; C23C14/34; (IPC1-7): C23C14/34; B22D18/04; C22C28/00

Domestic Patent References:

JP2000026961A	2000-01-25
JPH04184732A	1992-07-01
JPH0539566A	1993-02-19
JPH09206918A	1997-08-12
JPH0631431A	1994-02-08
JPH07228967A	1995-08-29

Attorney, Agent or Firm:

Toshio Yano
Toshiomi Yamazaki
Takuya Kuno
Einzel Felix-Reinhard
Reinhard Einsel

Previous Patent: Ir-ADDED Pt-Ti HIGH TEMPERATURE SHAPE MEMORY ALLOY

Next Patent: ELECTROLYTIC COPPER FOIL AND COPPER CLAD LAMINATE USING THE ELECTROLYTIC COPPER FOIL