Title:
METHOD FOR MANUFACTURING SPUTTER TARGET CONSISTING OF Si-BASED ALLOY, SPUTTER TARGET OF THIS KIND, AND ITS USE
Document Type and Number:
Japanese Patent JP2004162179
Kind Code:
A
Abstract:
To provide a sputter target having no disadvantages of a known sputter target which is manufactured at the cost as low as possible.
In a sputter target manufacturing method, a target material is manufactured in a casting technology by melting and casting in vacuum, and cast in a hollow cylindrical mold.
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Inventors:
Weigert, Dr. Martin
Heindel, Josef
Konietzka, Uwe
Heindel, Josef
Konietzka, Uwe
Application Number:
JP2003000381454
Publication Date:
June 10, 2004
Filing Date:
November 11, 2003
Export Citation:
Assignee:
WC HERAEUS GMBH
International Classes:
B22D18/04; B22D15/02; B22D27/15; C22C28/00; C23C14/34; (IPC1-7): C23C14/34; B22D18/04; C22C28/00
