To provide a method for matching an exposure pattern which is for exposure in a high-throughput electron beam exposure apparatus using a mask having a large-aperture pattern to other exposure patterns on the specimen, and to provide an exposure system.
The exposure system has an electron beam exposure apparatus for projecting an electron beam to a stencil mask 30 for exposing a specimen 40 to a shaped electron beam 15, a pattern deformation measuring unit 65 for measuring the deformation of the other pattern projected to the specimen, and a stencil mask manufacturing unit 70 for manufacturing an electron beam exposure stencil mask 85 for use in the electron beam exposure apparatus. The stencil mask manufacturing unit 70 manufactures a stencil mask having an aperture pattern deformed in response to the deformation of the other pattern measured by the pattern deformation measuring unit 65.
SHIN TAKUJI
Jun Tsuruta
Tetsuro Shimada
Shigeru Tsuchiya
Masaya Nishiyama
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