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Patent Searching and Data


Title:
METHOD OF MANUFACTURING THIN FILM DIODE ELEMENT
Document Type and Number:
Japanese Patent JP2002043657
Kind Code:
A
Abstract:

To reduce the manufacturing cost of a TFD element-driven reflection and reflection/semitransmission type liquid crystal display device using an MIM type nonlinear element and, at the same time, to improve the refinement and contrast of the device by proposing a new manufacturing process.

The manufacturing cost of an MIM type nonlinear element is reduced by improving the throughput and yield by reducing the number of manufacturing processes of the element. Specifically, the manufacturing process is shortened and, accordingly, the manufacturing cost is reduced by anodically oxidizing a first metal 1 through a transparent electrode film 2 in an anodic oxidation step. When the electrode film 2 is utilized as a base film, Ag and an AG alloy can be used as the raw material of wiring and reflective electrodes and the refinement and contrast of the element can be improved.


Inventors:
WATANABE YOSHITADA
Application Number:
JP2000227136A
Publication Date:
February 08, 2002
Filing Date:
July 27, 2000
Export Citation:
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Assignee:
SEIKO EPSON CORP
International Classes:
G02F1/136; G02F1/1365; G09F9/30; H01L29/88; H01L49/02; (IPC1-7): H01L49/02; G02F1/1365; G09F9/30; H01L29/88
Attorney, Agent or Firm:
Masanori Ueyanagi (1 outside)