To provide a method of manufacturing a thin-film transistor improving reproducibility of a process.
In the thin-film transistor 1, a gate electrode 12 and an oxide semiconductor film 15 is disposed on a substrate 11 with a gate insulating film 13 interposed therebetween and a source electrode 14A and a drain electrode 14B are disposed in contact with the oxide semiconductor film 15. The oxide semiconductor film 15 is formed by a DC sputtering method and a DC voltage Vdc for formation is set according to a carrier density D. Control of the carrier density D is facilitated by utilizing a proportional relation between the DC voltage Vdc and the carrier density D. A result of control is less susceptible to the accuracy of another equipment such as an MFC (Mass Flow Controller) or the like than in the case of controlling the carrier density by oxygen partial pressure adjustment.
COPYRIGHT: (C)2010,JPO&INPIT
| JP2011155224 | METHOD OF TRANSFERRING THIN-FILM ELEMENT GROUP |
| JP4896286 | Manufacturing method of semiconductor device |
| JP5495775 | Semiconductor device |
KAWASHIMA TOSHITAKA
Yasushi Santanzaki
Masao Hasebe
Takaaki Tanaami
Next Patent: OPTICAL COMMUNICATION MODULE