Title:
METHOD FOR MANUFACTURING THIN FILM TRANSISTOR
Document Type and Number:
Japanese Patent JP2010232682
Kind Code:
A
Abstract:
To provide a method for manufacturing a thin film transistor which reduces production cost and improves productivity using aluminum wiring material with low resistance.
The method for manufacturing the thin film transistor includes steps of: forming a film of pure aluminum or aluminum alloy as a first layer by sputtering using Ar gas; forming a second layer containing aluminum nitride partially in addition to the first layer material, by means of the sputtering using Ar+N2 mixed gas or Ar+NH 3 mixed gas, in the upper layer of the first layer; and electrically connecting a transparent film electrode and a second layer of a first electrode through a contact hole formed separately.
Inventors:
SAKATA KAZUYUKI
INOUE KAZUNORI
TAKEGUCHI TORU
NAKAMURA NOBUHIRO
YAMADA MASARU
INOUE KAZUNORI
TAKEGUCHI TORU
NAKAMURA NOBUHIRO
YAMADA MASARU
Application Number:
JP2010147793A
Publication Date:
October 14, 2010
Filing Date:
June 29, 2010
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L21/3205; G02F1/1368; G09F9/00; G09F9/30; H01L21/336; H01L21/768; H01L23/52; H01L29/786
Attorney, Agent or Firm:
Shogo Takahashi
Tadahiko Inaba
Kanako Murakami
Nakatsuru Kazutaka
Tadahiko Inaba
Kanako Murakami
Nakatsuru Kazutaka