Title:
METHOD FOR MANUFACTURING THIN-FILM TRANSISTOR
Document Type and Number:
Japanese Patent JP3478806
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To shorten the length of the channel of a thin-film transistor arranged, and to increase its crystallization in a short time by machining a plurality of parts by using a laser beam.
SOLUTION: A non-single crystal semiconductor film is formed, a laser beam is directed to ward the semiconductor film for crystallization, and an insulation film is formed on the crystallized semiconductor film, and this series of steps are conducted continuously in the same apparatus.
Inventors:
Mitsufumi Kodama
Mikio Kinka
Mikio Kinka
Application Number:
JP2001094932A
Publication Date:
December 15, 2003
Filing Date:
February 27, 1989
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
G02F1/1368; H01L21/20; H01L21/336; H01L29/786; (IPC1-7): H01L21/336; G02F1/1368; H01L21/20; H01L29/786
Domestic Patent References:
| JP583289A | ||||
| JP6325913A | ||||
| JP59195871A | ||||
| JP5785262A | ||||
| JP58127318A |
Attorney, Agent or Firm:
Kenzo Fukuda (3 others)
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