Title:
METHOD FOR MANUFACTURING THIN FILM
Document Type and Number:
Japanese Patent JP3176975
Kind Code:
B2
Abstract:
PURPOSE: To obtain an improved nitride layer by using an organic metallizing compound containing azide group or a compound containing the azide group and IV family element for vapor growth of a thin film containing nitrogen.
CONSTITUTION: A sapphire substrate 11 whose surface is purified is placed on a susceptor 24. A highly pure hydrogen is introduced from a gas-introduction pipe 22, thus enabling an atmosphere within the reaction pipe 21 to be replaced. Then, a pressure within the reaction pipe 21 is reduced, the highly pure hydrogen is introduced from the gas-introduction port 22, and then the susceptor 24 and the substrate 11 are heated by a high-frequency coil 25. After purifying the substrate in this manner, gas is switched to ammonium and the substrate is nitrified. Then, growth is made by introducing an organic compound containing azide group or a compound containing the azide group and TV family element. for example raw materials of (CH3)3SiN3 and Ga(CH3)3. thus enabling vapor growth to be made at a relatively low temperature and uptake of nitrogen into a nitride crystal to be promoted.
Inventors:
Gokou Hatano
Toshihide Izumiya
Yasuo Ohba
Toshihide Izumiya
Yasuo Ohba
Application Number:
JP5596292A
Publication Date:
June 18, 2001
Filing Date:
March 16, 1992
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
C23C16/34; C30B25/02; C30B29/38; H01L21/205; H01L33/28; H01L33/32; H01L33/34; H01L33/44; H01L33/54; H01L33/62; H01S5/00; H01S5/042; H01S5/323; (IPC1-7): H01L21/205; C23C16/34; C30B25/02; C30B29/38; H01L33/00
Domestic Patent References:
| JP6169969A | ||||
| JP60219726A |
Other References:
月刊Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｗｏｒｌｄ（プレスジャーナル社）、１９９１年１月号第１３０−１３２頁
Attorney, Agent or Firm:
Hideaki Togawa
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