To manufacture a transparent laminate having a completely crystallized transparent conductive layer.
In forming by sputtering the film of the transparent conductive layer consisting of In oxide or In-Sn multi component oxide on a substrate consisting of an organic polymeric molding, a metal target or oxide target having 0 to 7 wt.% In atoms based on the total weight of Sn atoms and Sn atoms is used. The inside of a vacuum vessel is then evacuated until a vacuum degree attains ≤1.5×10-4 Pa at a substrate temperature 80 to 150°C and the transparent conductive layer of 55 to 220 nm in film thickness is formed by introducing gaseous oxygen therein together with gaseous Ar in such a manner that the plasma light emission intensity of In after the introduction of the gaseous oxygen attains 36 to 60 in the metal target and 87 to 90 in the oxide target when the above light emission intensity of the case of the introduction of only the gaseous Ar is defined as 90. The substrate is thereafter heat treated for 0.5 to 1 hour at 120 to 150°C in the atmosphere, by which the transparent conductive laminate having the completely crystallized transparent conductive layer on the substrate is manufactured.
KAWAMURA KAZUNORI
TOYOSAWA KEIKO
MAEDA TOMOHIKO
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