To provide a method for manufacturing a super-steep retrograde well field effect transistor device, and to provide an ultra-thin body FET device manufactured by the same.
The method for manufacturing a super-steep retrograde well field effect transistor device starts with an SOI layer formed on a substrate, for example, an embedded oxide layer. The SOI layer is thinned so as to form an ultra-thin SOI layer. A separation trench is formed for dividing the SOI layer into an N ground layer region and a P ground layer region. The N and P ground layer regions formed in the SOI layer are doped with N-type and P-type dopants to a high concentration level. A semiconductor channel region is formed on the N and P ground layer regions. The source region and the drain region of the FET and the gate electrode stack on the channel region are formed. As desired, a diffusion retarding layer is formed between the SOI ground layer regions and the channel regions.
HOLT JUDSON R
LEONG MEIKEI
MO RENEE T
REN ZHIBIN
SHAHIDI GHAVAM G
| JPH10189766A | 1998-07-21 | |||
| JPH10242472A | 1998-09-11 | |||
| JP2003338561A | 2003-11-28 | |||
| JP2001274403A | 2001-10-05 |
Yoshihiro City
Takeshi Ueno