Title:
METHOD OF MANUFACTURING WAFER
Document Type and Number:
Japanese Patent JP2015032771
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a method of manufacturing a wafer, capable of suppressing removal amount when cutting out the wafer from an ingot.SOLUTION: This method of manufacturing the wafer by separating the ingot includes a crystal axis detecting step for setting a separation surface direction inclined at a prescribed angle with respect to a crystal axis by detecting the crystal axis of the ingot, a flattening step for flattening the top face of the ingot parallel to the separation surface direction after implementing the crystal axis detecting step, a modified surface forming step for forming a modified surface along the separation surface direction in the inside of the ingot by positioning the condensed point of a laser beam at the inside of the ingot and irradiating the lase beam fron the top face of the flattened ingot after implementing the flattening step, and a peeling step for manufacturing the wafer by separating the top face side of the ingot with the modified surface used as a boundary after implementing the modified surface forming step.
Inventors:
KOBAYASHI MASASHI
HARADA SEIJI
KOJIMA KATSUYOSHI
MAEDA NOBUHIDE
HARADA SEIJI
KOJIMA KATSUYOSHI
MAEDA NOBUHIDE
Application Number:
JP2013163068A
Publication Date:
February 16, 2015
Filing Date:
August 06, 2013
Export Citation:
Assignee:
DISCO ABRASIVE SYSTEMS LTD
International Classes:
H01L21/304; B23K26/00; B23K26/38; B23K26/40; B28D5/00
Domestic Patent References:
| JP2010529945A | 2010-09-02 | |||
| JP2010021398A | 2010-01-28 |
Foreign References:
| WO2012108055A1 | 2012-08-16 |
Attorney, Agent or Firm:
Matsumoto 昂
Tomohiro Okamoto
Tomohiro Okamoto