Title:
METHOD FOR MEASURING CHARACTERISTIC OF FIELD EFFECT TRANSISTOR
Document Type and Number:
Japanese Patent JP3117878
Kind Code:
B2
Abstract:
PURPOSE: To extract a source resistance, a drain resistance and a channel resis tance directly by opening the drain with respect to a forward-direction current, measuring the voltage across the gate and the drain and the voltage across the source and the drain, opening the source, measuring the voltage across the source and the drain, and using the specified expressions.
CONSTITUTION: A drain is opened, and the gate/drain voltage Vgd and the source/drain voltage Vds1 are measured. Then the source is opened, and the source/ drain voltage Vds2 is measured. Furthermore, the source and the drain are shorted, and the gate source voltage Vgs is measured. Then, the end resistance R1 is obtained from the intercept of the curve of (d)Vgd/(d)Ig versus I/Ig by using the expression I. The end resistance R2 is obtained from the inclination of the curve of Vds1 versus Ig. The end resistance R3 is obtained from the inclination of the curve of Vds2 versus Ig. The end resistance R4 is obtained from the intercept of the curve of (d)Vgs/(d)Ig versus I/Ig. Then the expression II is used, and the source resistance R5, the drain resistance Rd and the channel resistance Rch are computed.
Inventors:
vermillion rain
Masaaki Ishimaru
Masafumi Shimizu
Masaaki Ishimaru
Masafumi Shimizu
Application Number:
JP20721994A
Publication Date:
December 18, 2000
Filing Date:
August 31, 1994
Export Citation:
Assignee:
Sharp Corporation
International Classes:
G01R31/26; H01L21/66; (IPC1-7): G01R31/26; H01L21/66
Domestic Patent References:
| JP6195426A | ||||
| JP62237366A |
Attorney, Agent or Firm:
Kenzo Hara