Title:
METHOD FOR MEASURING THICKNESS OF SEMICONDUCTOR SUBSTRATE
Document Type and Number:
Japanese Patent JPH02307002
Kind Code:
A
Abstract:
PURPOSE:To find the substrate thickness of the semi-insulating semiconductor substrate accurately, speedily, and electrically by measuring the substrate thickness from the capacity between the reverse surface electrode and top surface electrode of the substrate. CONSTITUTION:The top surface electrode 2 is provided on the semi-insulating semiconductor substrate 1 and the reverse surface electrode 3 is formed on the reverse surface of the substrate 1. A pad 4 is provided on the top surface of the substrate 1 and held at the same potential with the reverse surface electrode 3. An eye hole 5 penetrates the substrate 1 to connect the top and reverse surfaces of the substrate 1 electrically. Then a probe stylus 6 is brought into contact with the pad 4 and top surface electrode 2 to measure the capacity between the electrodes 2 and 3 and the capacity value is calculated from a specific expression. Consequently, the capacity between the electrodes 2 and 3 is measured from the top surface of the substrate 1, the measuring operation is easily automated, and the high-accuracy substrate thickness can be measured.
Inventors:
KOMARU MAKIO
Application Number:
JP12931189A
Publication Date:
December 20, 1990
Filing Date:
May 23, 1989
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
G01B7/06; (IPC1-7): G01B7/08
Attorney, Agent or Firm:
Masuo Oiwa (2 outside)