Title:
METHOD FOR MELTING AND RECRYSTALLIZING POLYSILICON THIN FILM
Document Type and Number:
Japanese Patent JPS62292695
Kind Code:
A
Abstract:
PURPOSE:To obtain a silicon thin film having electric field-effect mobility approximating that of a single crystal with an inexpensive device and a simple operation by heating and melting a linear polysilicon thin film formed on an electrical insulating substrate by an electric current to recrystallize the thin film. CONSTITUTION:A linear polysilicon thin film 2 is patterned on an insulating substrate 1 of quartz, etc., an electrode 3 is brought into contact with the thin film, and the film is covered with a cap material 4. An electric current is passed through the electrode 3 under such conditions, and the polysilicon thin film 2 is heated by the Joule's heat, melted, and recrystallized. A high-m.p. metal such as 'nichrome' in used for the electrode 3, and the width of the pattern line of the polysilicon thin film 2 is increased under the electrode 3 or in the vicinity of the electrode. An insulating film of silicon diode, silicon nitride, etc., is used for the cap 4. As a result, a thin film useful as the active layer part of a transistor is obtained.
Inventors:
ISHIDA MAMORU
MORI KOJI
OTAKA KOICHI
MORI KOJI
OTAKA KOICHI
Application Number:
JP13503786A
Publication Date:
December 19, 1987
Filing Date:
June 12, 1986
Export Citation:
Assignee:
RICOH KK
RICOH GEN ELECTRON RES INST
RICOH GEN ELECTRON RES INST
International Classes:
C30B11/02; C30B11/00; C30B29/06; H01L21/208; (IPC1-7): C30B11/00; C30B29/06; H01L21/208
Attorney, Agent or Firm:
Koji Hoshino
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