PURPOSE: To provide a manufacturing method capable of simplifying a silicon wafer manufacturing step; shortening manufacturing time; and enhancing silicon wafer quality, and a device.

CONSTITUTION: A chamfered wafer W is soaked in an etching liquid 1 of an etching bath so that a wafer chuck 5 by which the water W is held may oppose to grinding member 7 vertically. The etching liquid is flown and supplied to the etching bath 4, while the chuck 5 rotates and the grinding member 7 rotates and revolves, whereby the wafer W is simultaneously ground and etched. As the etching liquid, a mixed acid of a specific composition composed of fluoric acid, nitric acid, and water, or alkaline liquid is used. It is possible to promptly perform grinding and etching for removing a process degeneration layer or heavy metals of the wafer resulted from the grinding in a single step.