METHOD FOR MONITORING END POINT TRACE OF PLASMA ETCHING REACTOR

Title:

METHOD FOR MONITORING END POINT TRACE OF PLASMA ETCHING REACTOR

Document Type and Number:

Japanese Patent JP01152286

Kind Code:

A

Abstract:

PURPOSE: To enable a method for detecting the abnormality during a production process operation and ameliorates the same by analyzing the characteristic of the candidate region of an actual end point trace over the entire part of the characteristic of the region of a reference end point trace to be matched.

CONSTITUTION: The reference end point trace(EPT) is first regulated. This reference EPT is divided to plural regions and the region of the actual EPT is matched. The characteristic of the desired matching region of the actual EPT and the characteristic of the region of the reference EPT to be matched are compared. As a result, whether the abnormality occurs at what time during the etching operation may be verified by this system. The regions are analyzed in details and the process specification rule is applied, by which the estimation of the case to the verified abnormality is made possible by this system.

Inventors:

Dolins, Steven B.
Srivastava, Aditya
Flinchbaugh, Bruce E.
Gunturi, Sarma S.
Lassiter, Thomas W.
Love, Robert L.

Application Number:

JP1988000195289

Publication Date:

June 14, 1989

Filing Date:

August 04, 1988

Export Citation:

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Assignee:

TEXAS INSTR INC

International Classes:

C23F4/00; H01L21/302; H01L21/3065; C23F4/00; H01L21/02; (IPC1-7): C23F4/00

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