Title:
METHOD FOR MONITORING THIN-FILM THICKNESS AND METHOD FOR MEASURING SUBSTRATE TEMPERATURE
Document Type and Number:
Japanese Patent JP3954319
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a method for monitoring a film thickness in-situ, while forming a thin film with a CVD apparatus.
SOLUTION: This monitoring method comprises the first step of measuring an emitted light from a reacting furnace (a quartz tube) 11 at outside of the reacting furnace, when forming the thin film 18 on a substrate 16 in the reacting furnace 11 with the CVD apparatus, and previously acquiring a relationship between variation of emissivity of the emitted light and variation of thickness of the thin film 18 on the substrate 16, the second step of measuring the variation of the emissivity, when forming the thin film 18 on the substrate 16 with the CVD apparatus after the first step, and the third step of assuming the thickness of the formed thin film 18 from the variation of the emissivity measured in the second step, on the basis of the relationship between the variation of the emissivity of the emitted light and the variation of the thickness of the thin film 18, which has been obtained in the first step.
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Inventors:
Hiroshi Akahori
Shuichi Samata
Shuichi Samata
Application Number:
JP2001094164A
Publication Date:
August 08, 2007
Filing Date:
March 28, 2001
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
C23C16/52; H01L21/205; H01L21/22; H01L21/28; H01L21/285; H01L21/302; H01L21/3065; H01L21/66; (IPC1-7): C23C16/52; H01L21/205; H01L21/22; H01L21/285; H01L21/3065; H01L21/66
Domestic Patent References:
| JP8139147A | ||||
| JP53011189B1 | ||||
| JP50007785A | ||||
| JP3197384A | ||||
| JP5209280A | ||||
| JP11200053A | ||||
| JP2039525A | ||||
| JP8162415A | ||||
| JP2001257194A |
Attorney, Agent or Firm:
Takehiko Suzue
Sadao Muramatsu
Ryo Hashimoto
Satoshi Kono
Makoto Nakamura
Shoji Kawai
Sadao Muramatsu
Ryo Hashimoto
Satoshi Kono
Makoto Nakamura
Shoji Kawai