PURPOSE: To enable free radical polymn. without using an oxygen barrier sheet and to enhance the resolution of an image by using a specified photoresist.
CONSTITUTION: A curable cationic photoresist is formed on a substrate and imagewisely exposed with laser beams from Ar ion laser, etc., the exposed part of the photoresist is cured by cationic polymn. and the photoresist is patterned by development. The photoresist preferably contains about 69-79wt.% octafunctional bisphenol A epoxy novolak (e.g. a compd. represented by formula I), about 15-17wt.% bifunctional alicyclic epoxy (e.g. a compd. represented by formula II), about 4-6wt.% trifunctional epoxy (e.g. a compd. represented by formula III), about 2.9-6.9wt.% photosensitizer (e.g. a compd. represented by formula IV) and 0 to about 0.15wt.% surfactant (e.g. a desired fluorine-contg. surfactant).
JIEFURII DONARUDO JIEROOMU
JIYOZEFU POORU KUTSUINSUKII
UIRIAMU HAUERU RORENSU
| JPS59184220A | 1984-10-19 | |||
| JPS606946A | 1985-01-14 | |||
| JPS62273221A | 1987-11-27 | |||
| JPS6371840A | 1988-04-01 | |||
| JPS63261259A | 1988-10-27 |