To uniformly polish the surface containing a copper-based wiring layer, a barrier layer and an insulated layer, by using a slurry in which the polishing speed ratio between the copper-based wiring layer and the barrier layer, between the copper-based wiring layer and the insulated layer, and between the insulated layer and the copper-based wiring layer are specified, and by stopping each step according to a change in torque resistance every time each layer appears on the polished surface.
Polishing is conducted by using a chemical mechanical polishing slurry in which the polishing speed ratio (A) between the copper-based wiring layer 1 and the barrier layer 2 is 10.0 or more, and the polishing is stopped according to a change in torque resistance at the time of appearance of the barrier layer 2 on the polished surface. Subsequently, polishing is conducted by using a slurry in which above-mentioned rate is 1.5≥A≥0.8 and the polishing speed ratio between the wiring layer 1 and the insulated layer 3 is 2.0 or more, and the polishing is stopped according to a change in torque resistance at the time of appearance of the insulated layer 3 on the polished surface. Subsequently, polishing is conducted by using the slurry in which polishing speed ratio between the insulated layer 3 and the wiring layer 1 is 5.0 or more, and the polishing is stopped according to a change in torque resistance at the time of appdarances of insulated layer 3 and the wiring layer 1 on the same plane.
| JP2000036527 | SUBSTRATE TRANSFER PROCESSING APPARATUS AND METHOD THEREFOR |
| JP2023003965 | GRINDING WHEEL |
| JP2005039114 | SEMICONDUCTOR WAFER SHIFTING DEVICE |
YAMASHITA JUNICHI
TSUGITA KATSUYUKI
MAMARU YUKIE
Next Patent: POLISHING DEVICE