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Title:
METHOD FOR PLATING COPPER THIN FILM
Document Type and Number:
Japanese Patent JP3488193
Kind Code:
B2
Abstract:

PROBLEM TO BE SOLVED: To reduce defects generated on the boundaries of copper seed layers by depositing copper thin films having low specific resistance and strongly oriented to the (111) face on the copper seed layers and to deposit the copper thin films having good coverability onto fine contact holes.
SOLUTION: An aqueous solution of copper silicofluoride is used as an electrolytic solution, and copper thin films are selectively deposited on copper seed layers by plating.


Inventors:
Toru Hara
Mitsuo Miyamoto
Toshiaki Nagata
Shoichi Ishida
Sakamoto et al.
Toshio Tateno
Application Number:
JP2000291585A
Publication Date:
January 19, 2004
Filing Date:
September 26, 2000
Export Citation:
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Assignee:
Morita Chemical Industry Co., Ltd.
Toru Hara
International Classes:
C25D3/38; C25D7/00; C25D7/12; H01L21/288; H01L23/14; H05K3/18; (IPC1-7): C25D3/38
Domestic Patent References:
JP2000248397A
JP305306B1
Attorney, Agent or Firm:
Kunihiko Fujita (1 outside)