Title:
METHOD OF PREPARING THIN FILM OF AMORPHOUS SILICON
Document Type and Number:
Japanese Patent JPS5698819
Kind Code:
A
Abstract:
PURPOSE:To prevent the occurrence of a crystal deffect and improve the optical conductivity due to a lower gas pressure by setting a amorphous Si thin film performing an ion plating with a use of H2 gas less than 10<-2> Torr. CONSTITUTION:A clear and pure glass substrate is set on a holder 9. When a H2 is introduced at less than 10<-6> Torr vacuum to make a chamber 2X10<-4> Torr, the vaccum in a beam occurrence chamber 3 becomes approximately 10<-6> Torr by a differential vacuum plate 2, whereby the operation of an electron beam evaporation source 7 becomes possible. An N type Si block is put into a vapor source 7 maintaning the temperature of a substrate at 300 deg.C and a high frequency wave is applied to the coil to discharge, thereby performing an ion plating. Approximately several hundred volts of a negative voltage is applied to the holder 9, whereby the velocity and the transporting amount of formed ions to the substrate are controlled accurately. By this method, the occurrence of the defect on the thin film surface can be prevented using a lower gas pressure. Further, a poor photoconductivity of the amorphous silicon film can be improved. Furthermore, a close contact with the substrate, the uniformity of the film and the growth velocity of the film can be increased.
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Inventors:
SAITOU TAKESHI
Application Number:
JP117580A
Publication Date:
August 08, 1981
Filing Date:
January 09, 1980
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L31/04; C23C14/14; H01L21/205; (IPC1-7): H01L21/205; H01L31/00