Title:
METHOD FOR PRETREATING SEMICONDUCTOR SUBSTRATE, AND MANUFACTURE OF INFRARED DETECTOR
Document Type and Number:
Japanese Patent JP2000357814
Kind Code:
A
Abstract:
To provide a method for manufacturing an infrared with high detection efficiency by reducing impurities in a compound semiconductor layer containing Hg.
A p-type HgCdTe layer 11 is subjected to plasma etching treatment, and the surface layer part is etched by approximately 2 μm in thickness. At this time, a mixed gas of hydrogen, argon, and nitrogen is used as the etching gas. Impurities such as Li and Na existing over the entire region of the HgCdTe layer 11 and those such as Ag existing near the surface of an HgCdTe layer 21 are attracted to a region that is extremely close to the surface of the HgCdTe layer 11 in plasma etching and are eliminated by etching.
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Inventors:
MIYATAKE TETSUYA
ARINAGA KENJI
SUDO HAJIME
FUJIWARA KOJI
KAJIWARA NOBUYUKI
ARINAGA KENJI
SUDO HAJIME
FUJIWARA KOJI
KAJIWARA NOBUYUKI
Application Number:
JP16911399A
Publication Date:
December 26, 2000
Filing Date:
June 16, 1999
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L21/302; H01L21/3065; H01L31/0264; H01L31/10; (IPC1-7): H01L31/10; H01L21/3065; H01L31/0264
Attorney, Agent or Firm:
Keizo Okamoto
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