Title:
METHOD FOR PROCESSING SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2011100822
Kind Code:
A
Abstract:
To provide a method for processing a minute semiconductor device, and particularly to provide a processing method suitable for miniaturization of a device having a structure normally called a high-k/metal gate.
An insulation film formed on a Si substrate and containing Hf or Zr and a deposited film present on the upper or lower layer thereof or in the film are removed by repeating dry etching and wet etching one or more times by putting the wet etching first.
Inventors:
Ono, Tetsuo
Morooka, Satoru
Morooka, Satoru
Application Number:
JP2009000253910
Publication Date:
May 19, 2011
Filing Date:
November 05, 2009
Export Citation:
Assignee:
HITACHI HIGH-TECHNOLOGIES CORP
International Classes:
H01L29/78; H01L21/306; H01L21/3065; H01L21/308
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