Title:
METHOD OF PROCESSING SUBSTANCE TO BE PROCESSED
Document Type and Number:
Japanese Patent JP3221530
Kind Code:
B2
Abstract:
PURPOSE: To provide a method of processing a substance to be processed, which can reduce the cost of vacuum processing and improve the throughput and also raise the yield rate.
CONSTITUTION: In this method of processing a substance to be processed, a titanium film is formed on a semiconductor wafer W within the second vacuum processing chamber 12, and then this semiconductor wafer W is shifted into the second preliminary vacuum chamber 32, and nitrogen atmosphere is created in this second preliminary vacuum chamber 32, and also the semiconductor wafer W is heated, and the titanium film is nitrided to form a titanium nitride film.
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Inventors:
Kimihiro Matsuse
Application Number:
JP18200993A
Publication Date:
October 22, 2001
Filing Date:
June 28, 1993
Export Citation:
Assignee:
東京エレクトロン株式会社
International Classes:
H01L21/28; H01L21/3205; H01L21/768; H01L23/52; (IPC1-7): H01L21/28; H01L21/3205; H01L21/768
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Attorney, Agent or Firm:
Hajime Obara