To provide a method for processing wafer laser capable of forming a laser processed trench along a predividing line, without making debris attach directly to the surface of a wafer and also to the wall surface of the laser processed trench formed already.
The method for processing wafer laser that performs abrasion processing, along the predividing line formed on the wafer by irradiating a laser beam to form the laser processed trench along the predividing line on the wafer, includes a protective material coating step for coating a liquid protective material, mainly containing a water-soluble silicone oil on a processed surface of the wafer; and a laser processed trench forming step for forming the laser processed trench along the predividing line, by making the laser beam irradiate onto the wafer whose processed surface is coated, with the protective material along the predividing line from the protective material side with the protective material being in a state that has fluidity.
ASANO KENJI
YAMASHITA YOHEI
JP2006140311A | 2006-06-01 | |||
JPH01298113A | 1989-12-01 | |||
JPS58110190A | 1983-06-30 | |||
JPH06198461A | 1994-07-19 | |||
JP2005088068A | 2005-04-07 | |||
JP2004188475A | 2004-07-08 | |||
JP2005150523A | 2005-06-09 | |||
JPS5037347A | 1975-04-08 | |||
JPH08132260A | 1996-05-28 | |||
JPH07185875A | 1995-07-25 | |||
JP2006198664A | 2006-08-03 | |||
JPS5877414A | 1983-05-10 | |||
JP2003213217A | 2003-07-30 |
US20050139962A1 | 2005-06-30 | |||
WO2004110694A2 | 2004-12-23 |
Sachiko Okunuki