To easily produce a composite material which is suitable as a heat radiation member of a semiconductor device, or the like, and has a metallic layer of the kind same as that of a matrix on the surface at a low cost.
A metallic mold 5 which can be divided into a plurality of mold constituting pieces 5a and 5b is used, and the mold 5 is assembled in a state in which a metallic sheet 6 is held between the mold constituting pieces 5a and 5b. The inside of the metallic mold 5 is charged with SiC powder 4. Thereafter, a metal to be made into a matrix phase 2a is fed to the mold 5 in a molten state, and is infiltrated into the space among the charged material. Then, at least the face on the side corresponding to the SiC powder 4 in the metallic sheet 6 is melted and integrated with the metal of the matrix phase 2a. After that, cooling is allowed to occur, so that a composite material 1 in which a metallic layer 3 of the kind same as that of the metal of the matrix phase 2a is exposed can be obtained.
SUGIYAMA TOMOHEI
KINOSHITA KYOICHI
KONO EIJI
