To provide a method for forming a sulfur-added titanium dioxide film which can be suitably used for environmental purification such as decomposition, removal and the like of harmful gases such as nitrogen oxides and in a gas sensor element, as a photocatalyst film, and which has a very thin thickness of around several hundred nanometers and is redued in crystal defects by crystal orientation.
Sulfur is added to a titanium dioxide single crystal film by the ion-implantation method. Crystal disturbance caused by ion-implantation is restored by heat treatment after the ion-implantation, to prepare a crystal-oriented film of sulfur-added titanium dioxide. A crystal-oriented film of sulfur-added titanium dioxide is obtained also by the pulsed laser vapor deposition using a target material prepared by firing titanium disulfide.
COPYRIGHT: (C)2006,JPO&NCIPI
Takenori Akinori
Masato Yoshikawa
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JP4568866B1 |
WO2001010553A1 |
UMEBAYASHI T, YAMAKI T, YAMAMOTO S, MIYASHITA A, TANAKA S, SUMITA T,Sulfur-doping of rutile-titanium dioxide by ion implantation: Photocurrent spectroscopy and first-principles band calculation studies ,J Appl Phys ,2003年 5月 1日,Vol.93, No.9 ,Page.5156-5160
八巻 徹也 他,レーザー蒸着法による高配向性TiO2薄膜の作製,日本化学会講演予稿集,2000年 3月15日,Vol.78, No.1,p.69
Shinjiro Ono
Yasushi Kobayashi
Akio Chiba
Hiroyuki Tomita
Shurin Sakurai
Fujihiro Kanda
Hideo Tanaka
Shinya Hosokawa
Norihiro Fukasawa
Koji Hirayama