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Patent Searching and Data


Title:
METHOD FOR PRODUCING CRYSTAL SILICON PARTICLE
Document Type and Number:
Japanese Patent JP2009126726
Kind Code:
A
Abstract:

To provide a method for producing a crystal silicon particle which has high photoelectric conversion efficiency because of not having a steeple head part containing impurities with high consistency, which is suitable for using as a high performance photoelectric conversion device and which is suitable for using as a highly reliable photoelectric conversion device because a plurality of crystal silicon particles can be efficiently arranged on an electroconductive substrate and joined with uniform joining force and uniform depth.

In the method for producing the crystal silicon particle 101, a silicon molten liquid is discharged in a granular state from a nozzle part at a crucible, the crystal silicon particle 101 having the steeple head part 105 segregated with impurities and being a quasi-single crystal is produced by cooling and solidifying the granular silicon molten liquid and then the steeple head part 105 on the crystal silicon particle 101 is removed.


Inventors:
TANABE HIDEYOSHI
FUKUDA JUN
ARIMUNE HISAO
Application Number:
JP2007300890A
Publication Date:
June 11, 2009
Filing Date:
November 20, 2007
Export Citation:
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Assignee:
KYOCERA CORP
International Classes:
C30B29/06; C01B33/02; C30B11/00; C30B33/00; H01L21/02; H01L31/042