Title:
METHOD OF PRODUCING EPITAXIAL WAFER
Document Type and Number:
Japanese Patent JP3760889
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To produce an epitaxial wafer having a certain level gettering capacity regardless of the position of an ingot.
SOLUTION: This production method for the epitaxial wafer comprises subjecting a silicon wafer sliced from a single crystal ingot grown by doping with not less than 1×1013 atoms/cm3 of nitrogen to a heat treatment at a temperature of not lower than 700°C but lower than 900°C for 15 min. to 4 hrs. and then to an epitaxial growth treatment on a wafer surface. In this case, it is preferable to regulate an oxygen concentration in the silicon wafer to 11×1017 atoms/cm3 or more, and to carry out the above heat treatment in the atmosphere of a mixture of oxygen and inert gas prior to the step of mirror polishing of wafers. Further, in the growth of the single crystal ingot, it is desirable to slow a pulling rate in starting tail formation as compared with that of the body, or to control a cooling rate from 1,050°C to 700°C to 2.5°C/min or lower in the body region to 200 mm above the boundary of the body and tail of the single crystal ingot.
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Inventors:
Eiichi Asayama
Yasuo Koike
Tadami Tanaka
Toshiaki Ono
Masataka Horai
Nishikawa Eiji
Yasuo Koike
Tadami Tanaka
Toshiaki Ono
Masataka Horai
Nishikawa Eiji
Application Number:
JP2002148634A
Publication Date:
March 29, 2006
Filing Date:
May 23, 2002
Export Citation:
Assignee:
Sumco inc.
International Classes:
C30B29/06; C30B33/02; (IPC1-7): C30B29/06
Domestic Patent References:
| JP10229093A | ||||
| JP2000044389A | ||||
| JP2001156074A |
Attorney, Agent or Firm:
Michio Mori
Terutada Hogami
Terutada Hogami