METHOD FOR PRODUCING HIGH PURITY SILICON - HITACHI SHIPBUILDING ENG CO

Title:

METHOD FOR PRODUCING HIGH PURITY SILICON

Document Type and Number:

Japanese Patent JP2009084129

Kind Code:

A

Abstract:

To provide a method for easily removing boron and phosphorous with low energy in a metal silicon production process.

The method for producing high purity silicon for a solar cell is provided in which metallic silicon is produced by reducing silica stone (SiO2) using metallic aluminum and/or metallic magnesium as a reducing agent, wherein simultaneously with the reduction reaction, a calcium compound is reacted with boron and/or phosphorous included in the silica stone, and thus, the boron and/or phosphorous is removed. and the method is characterized in that the amount of the calcium compound to be added is 1 to 1.5 times the theoretical molar quantity of generation of the calcium compound and the boron and/phosphorous compound.

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Inventors:

KONDO MASAYOSHI
YANO ATSUSHI

Application Number:

JP2007258599A

Publication Date:

April 23, 2009

Filing Date:

October 02, 2007

Export Citation:

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Assignee:

HITACHI SHIPBUILDING ENG CO

International Classes:

C01B33/023

Domestic Patent References:

JPS58156520A	1983-09-17
JP2002193612A	2002-07-10
JPH09202611A	1997-08-05

Attorney, Agent or Firm:

Norihiko Hibi
Einosuke Kishimoto
Akira Watanabe
Matsumura Naoto

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