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Title:
METHOD FOR PRODUCING LINEAR NANOMATERIAL, THE LINEAR NANOMATERIAL PRODUCED THEREBY, AND THIN FILM TRANSISTOR SUBSTRATE GIVEN BY UTILIZING THE LINEAR NANOMATERIAL
Document Type and Number:
Japanese Patent JP2007039683
Kind Code:
A
Abstract:

To provide a method for producing a linear nanomaterial, capable of easily conducting control of a wall thickness and multilayer formation, to provide the linear nanomaterial produced thereby, and to provide a thin film transistor substrate given by utilizing the linear nanomaterial.

This method for producing the linear nanomaterial includes a process for preparing a template in which pore spaces having a diameter of not more than 200 nm are formed and a process for introducing an organic substance of a gas phase into the pore spaces and forming the linear nanomaterial therein. The linear nanomaterial thus produced has a diameter of not more than 200 nm and comprises a tubular shell of which the inside is hollow and a core which is formed inside the shell.


Inventors:
OH JOON-HAK
Application Number:
JP2006200304A
Publication Date:
February 15, 2007
Filing Date:
July 24, 2006
Export Citation:
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Assignee:
SAMSUNG ELECTRONICS CO LTD
International Classes:
C08G85/00; B82B3/00; H01L21/312; H01L21/363; H01L29/06; H01L29/786; H01L51/05; H01L51/40
Attorney, Agent or Firm:
Yukio Ono
Tomoko Inazumi
Horikawa Kaori