Title:
METHOD OF PRODUCING PLANAR PHOTODIODE WITH HETERO STRUCTURE
Document Type and Number:
Japanese Patent JPS5928392
Kind Code:
A
Abstract:
In a method for manufacturing an avalanche photodiode with an epitaxial layer sequence on a carrier body, the carrier body is not the substrate for an epitaxy of the photodiode. One of the epitaxial layers is employed as a selectively etchable mask for generating a pn junction of the diode.
Inventors:
RAINAA TORONMAA
Application Number:
JP12869583A
Publication Date:
February 15, 1984
Filing Date:
July 14, 1983
Export Citation:
Assignee:
SIEMENS AG
International Classes:
H01L31/10; H01L31/107; H01L31/18; (IPC1-7): H01L31/10
Attorney, Agent or Firm:
Tomimura Kiyoshi