Title:
METHOD OF PRODUCING POROUS SILICON MATERIAL, POROUS SILICON MATERIAL, AND STORAGE DEVICE
Document Type and Number:
Japanese Patent JP2023092861
Kind Code:
A
Abstract:
To provide a method for producing a porous silicon material that allows the decrease in charge-discharge characteristics to be more suppressed in materials containing Si.SOLUTION: A method for producing a porous silicon material of the present disclosure includes a precursor step of obtaining a precursor of a silicon alloy by melting and rapidly solidifying a raw material containing 1 at% to 20 at% Cr, 40 at% to 90 at% Al, and the remainder Si, when the total content of Si, Al, and Cr is 100 at%, and a porosity-increasing step of obtaining a porous silicon material by removing the Al component contained in the silicon alloy.SELECTED DRAWING: None
Inventors:
MATSUBARA MASAHARU
SUZUKI RYO
NAGAMEGURI NAOYUKI
KAWAURA HIROYUKI
KONDO YASUHITO
WASEDA TETSUYA
YOSHIDA ATSUSHI
UCHIYAMA TAKAYUKI
SUZUKI RYO
NAGAMEGURI NAOYUKI
KAWAURA HIROYUKI
KONDO YASUHITO
WASEDA TETSUYA
YOSHIDA ATSUSHI
UCHIYAMA TAKAYUKI
Application Number:
JP2021208125A
Publication Date:
July 04, 2023
Filing Date:
December 22, 2021
Export Citation:
Assignee:
TOYOTA CENTRAL RES & DEV
TOYOTA MOTOR CORP
TOYOTA MOTOR CORP
International Classes:
C01B33/06; C01B33/02; H01M4/38
Attorney, Agent or Firm:
Patent Attorney Corporation ITEC International Patent Office