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Title:
METHOD FOR PRODUCING POROUS SILICON MATERIAL, POROUS SILICON MATERIAL, AND POWER STORAGE DEVICE
Document Type and Number:
Japanese Patent JP2023140512
Kind Code:
A
Abstract:
To provide a porous silicon material in which, in materials containing Si, deterioration in charge/discharge characteristics is further suppressed.SOLUTION: A method for producing porous silicon material of the present disclosure includes a precursor step of melting and rapidly cooling and solidifying a Si, Al and Nb-containing raw material to yield a silicon alloy precursor, and a porosification step of removing Al component contained in silicon alloy to yield a porous silicon material.SELECTED DRAWING: None

Inventors:
NAGAMEGURI NAOYUKI
SUZUKI RYO
KAWAURA HIROYUKI
KONDO YASUHITO
MATSUBARA MASAHARU
OISHI KEIICHIRO
WASEDA TETSUYA
YOSHIDA ATSUSHI
UCHIYAMA TAKAYUKI
Application Number:
JP2022046387A
Publication Date:
October 05, 2023
Filing Date:
March 23, 2022
Export Citation:
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Assignee:
TOYOTA CENTRAL RES & DEV
TOYOTA MOTOR CORP
International Classes:
C01B33/02; C01B33/06; H01G11/50; H01G11/62; H01G11/86; H01M4/38
Attorney, Agent or Firm:
Patent Attorney Corporation ITEC International Patent Office



 
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