To provide a ruthenium alloy sputtering target that improves quality of a formed film.
The ruthenium alloy sputtering target is provided, which is a ruthenium alloy sintered compact target obtained by sintering mixed powder of ruthenium powder and metal powder having stronger oxidizability than ruthenium, wherein the purity of the target excluding gas components is 99.95 wt.% or higher, the target includes 5-60 at% of metal capable of creating oxides easier than ruthenium, the relative density is 99% or higher, and the oxygen content as impurities is 1,000 ppm or less. The ruthenium alloy sputtering target reduces the generation of arcing and particles during sputtering by reducing oxygen existing in the target, increases the target strength by improving the sintered density, and further strictly restricts the amount of B and P impurities in the target in order to prevent the compositional variability of B and P added in minute amounts to a Si semiconductor.
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